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| SUM110N05-06L Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 55 FEATURES ID (A) 110 92 rDS(on) (W) 0.006 @ VGS = 10 V 0.0085 @ VGS = 4.5 V Qg (Typ) 65 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial D TO-263 G G DS S N-Channel MOSFET Top View Ordering Information: SUM110N05-06L SUM110N05-06L--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C TA = 25_C c TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 55 "20 110 63 240 60 180 158b 3.7 -55 to 175 Unit V A mJ W _C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient--PCB Mountc Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 0.95 Unit _C/W Document Number: 72005 S-42140--Rev. B, 15-Nov-04 www.vishay.com 1 SUM110N05-06L Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 55 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 55 V, VGS = 0 V, TJ = 125_C VDS = 55 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0047 0.0066 0.006 0.0085 0.0102 0.0132 S W 55 1 3 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.27 W ID ^ 110 A, VGEN = 10 V, Rg = 2.5 W VDS = 30 V, VGS = 10 V, ID = 110 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 3300 625 310 65 15 16 15 15 35 15 25 25 55 25 ns 100 nC pF Source-drain Diode Ratings and Characteristics (Tc = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 110 A, VGS = 0 V IF = 110 A, di/dt = 100 A/ms A A/ 1.0 70 2.5 0.09 110 240 1.5 125 5 0.31 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72005 S-42140--Rev. B, 15-Nov-04 2 SUM110N05-06L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 5 V I D - Drain Current (A) 250 Transfer Characteristics 200 I D - Drain Current (A) 200 150 4V 150 100 100 TC = 125_C 25_C -55_C 0 50 2, 3 V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 50 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C r DS(on) - On-Resistance ( W ) 0.015 On-Resistance vs. Drain Current 160 g fs - Transconductance (S) 0.012 25_C 120 125_C 80 0.009 VGS = 4.5 V 0.006 VGS = 10 V 40 0.003 0 0 15 30 45 60 75 90 VGS - Gate-to-Source Voltage (V) 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) 5000 Capacitance V GS - Gate-to-Source Voltage (V) 20 VGS = 30 V ID = 110 A Gate Charge 4000 C - Capacitance (pF) Ciss 3000 16 12 2000 Crss Coss 8 1000 4 0 0 11 22 33 44 55 VDS - Drain-to-Source Voltage (V) Document Number: 72005 S-42140--Rev. B, 15-Nov-04 0 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N05-06L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.5 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S - Source Current (A) Source-Drain Diode Forward Voltage 2.0 rDS(on) - On-Resiistance (Normalized) 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 70 On-Resistance vs. Junction Temperature ID = 10 m A 100 rDS(on) - On-Resiistance (Normalized) I Dav (a) 65 10 IAV (A) @ TJ = 25_C 60 1 IAV (A) @ TJ = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) 55 50 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72005 S-42140--Rev. B, 15-Nov-04 SUM110N05-06L Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature 120 100 100 I D - Drain Current (A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified I D - Drain Current (A) 100 ms Safe Operating Area 1000 *Limited by rDS(on) 10 ms 10 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms dc 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72005. Document Number: 72005 S-42140--Rev. B, 15-Nov-04 www.vishay.com 5 |
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